Ferroelectric memory device and method of manufacturing the...

Details Ferroelectric memory device and method of manufacturing the... Ferroelectric memory device and method of manufacturing the...

2006-08-15

2006-08-15

Tran, Mai-Huong (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S239000, C438S242000, C438S243000, C438S244000, C438S386000

Reexamination Certificate

active

07091537

ABSTRACT:
A ferroelectric memory device includes a first trench formed in a semiconductor substrate and having a first depth, a second trench formed in the substrate and having a second depth, a first element isolation insulating film buried in the first trench, a first gate electrode formed in a lower region of the second trench, a first insulating film formed in an upper region of the second trench, first and second diffusion layers formed in the substrate on both side surface in the second trench, a first ferroelectric capacitor disposed on the first diffusion layer, a first contact disposed on the first ferroelectric capacitor, a first wiring layer disposed on the first contact, a second contact disposed on the second diffusion layer, and a second wiring layer disposed on the second contact and disposed in the same level as that of the first wiring layer.

REFERENCES:
patent: 6258658 (2001-07-01), Bohm et al.
patent: 06-268174 (1994-09-01), None
patent: 8-125144 (1996-05-01), None
patent: 10-270652 (1998-10-01), None
patent: 2002-094022 (2002-03-01), None

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