Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-31
2006-10-31
Gurley, Lynne (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S643000, C438S645000, C438S648000, C438S653000, C438S656000, C438S672000, C438S685000, C438S687000, C438S690000, C438S692000, C438S746000, C438S754000
Reexamination Certificate
active
07129160
ABSTRACT:
A method and apparatus for simultaneously removing conductive materials from a microelectronic substrate. A method in accordance with one embodiment of the invention includes contacting a surface of a microelectronic substrate with an electrolytic liquid, the microelectronic substrate having first and second different conductive materials. The method can further include controlling a difference between a first open circuit potential of the first conducive material and a second open circuit potential of the second conductive material by selecting a pH of the electrolytic liquid. The method can further include simultaneously removing at least portions of the first and second conductive materials by passing a varying electrical signal through the electrolytic liquid and the conductive materials. Accordingly, the effects of galvanic interactions between the two conductive materials can be reduced and/or eliminated.
REFERENCES:
patent: 2315695 (1943-04-01), Faust
patent: 2516105 (1950-07-01), der Mateosian
patent: 3334210 (1967-08-01), Williams et al.
patent: 4839005 (1989-06-01), Katsumoto et al.
patent: 5098533 (1992-03-01), Duke et al.
patent: 5162248 (1992-11-01), Dennison et al.
patent: 5244534 (1993-09-01), Yu et al.
patent: 5300155 (1994-04-01), Sandhu et al.
patent: 5344539 (1994-09-01), Shinogi et al.
patent: 5562529 (1996-10-01), Kishii et al.
patent: 5567300 (1996-10-01), Datta et al.
patent: 5575885 (1996-11-01), Hirabayashi et al.
patent: 5618381 (1997-04-01), Doan et al.
patent: 5624300 (1997-04-01), Kishii et al.
patent: 5676587 (1997-10-01), Landers et al.
patent: 5681423 (1997-10-01), Sandhu et al.
patent: 5780358 (1998-07-01), Zhou et al.
patent: 5807165 (1998-09-01), Uzoh et al.
patent: 5840629 (1998-11-01), Carpio
patent: 5843818 (1998-12-01), Joo et al.
patent: 5846398 (1998-12-01), Carpio
patent: 5863307 (1999-01-01), Zhou et al.
patent: 5888866 (1999-03-01), Chien
patent: 5897375 (1999-04-01), Watts et al.
patent: 5911619 (1999-06-01), Uzoh et al.
patent: 5930699 (1999-07-01), Bhatia
patent: 5934980 (1999-08-01), Koos et al.
patent: 5952687 (1999-09-01), Kawakubo et al.
patent: 5954975 (1999-09-01), Cadien et al.
patent: 5954997 (1999-09-01), Kaufman et al.
patent: 5972792 (1999-10-01), Hudson
patent: 5993637 (1999-11-01), Hisamatsu et al.
patent: 6001730 (1999-12-01), Farkas et al.
patent: 6007695 (1999-12-01), Knall et al.
patent: 6010964 (2000-01-01), Glass
patent: 6024856 (2000-02-01), Haydu et al.
patent: 6033953 (2000-03-01), Aoki et al.
patent: 6039633 (2000-03-01), Chopra
patent: 6046099 (2000-04-01), Cadien et al.
patent: 6051496 (2000-04-01), Jang
patent: 6060386 (2000-05-01), Givens
patent: 6060395 (2000-05-01), Skrovan et al.
patent: 6063306 (2000-05-01), Kaufman et al.
patent: 6066030 (2000-05-01), Uzoh
patent: 6066559 (2000-05-01), Gonzalez et al.
patent: 6068787 (2000-05-01), Grumbine et al.
patent: 6083840 (2000-07-01), Mravic et al.
patent: 6100197 (2000-08-01), Hasegawa
patent: 6103096 (2000-08-01), Datta et al.
patent: 6103628 (2000-08-01), Talieh
patent: 6103636 (2000-08-01), Zahorik et al.
patent: 6115233 (2000-09-01), Seliskar et al.
patent: 6117781 (2000-09-01), Lukanc et al.
patent: 6121152 (2000-09-01), Adams et al.
patent: 6132586 (2000-10-01), Adams et al.
patent: 6143155 (2000-11-01), Adams et al.
patent: 6162681 (2000-12-01), Wu
patent: 6171467 (2001-01-01), Weihs et al.
patent: 6174425 (2001-01-01), Simpson et al.
patent: 6176992 (2001-01-01), Talieh
patent: 6180947 (2001-01-01), Stickel et al.
patent: 6187651 (2001-02-01), Oh
patent: 6190494 (2001-02-01), Dow
patent: 6196899 (2001-03-01), Chopra et al.
patent: 6197182 (2001-03-01), Kaufman et al.
patent: 6206756 (2001-03-01), Chopra et al.
patent: 6218309 (2001-04-01), Miller et al.
patent: 6250994 (2001-06-01), Chopra et al.
patent: 6259128 (2001-07-01), Adler et al.
patent: 6273786 (2001-08-01), Chopra et al.
patent: 6276996 (2001-08-01), Chopra
patent: 6280581 (2001-08-01), Cheng
patent: 6287974 (2001-09-01), Miller
patent: 6299741 (2001-10-01), Sun et al.
patent: 6303956 (2001-10-01), Sandhu et al.
patent: 6313038 (2001-11-01), Chopra et al.
patent: 6322422 (2001-11-01), Satou
patent: 6328632 (2001-12-01), Chopra
patent: 6368184 (2002-04-01), Beckage
patent: 6368190 (2002-04-01), Easter et al.
patent: 6379223 (2002-04-01), Sun et al.
patent: 6395607 (2002-05-01), Chung
patent: 6455370 (2002-09-01), Lane
patent: 6461911 (2002-10-01), Ahn et al.
patent: 6464855 (2002-10-01), Chadda et al.
patent: 6620037 (2003-09-01), Kaufman et al.
patent: 6689258 (2004-02-01), Lansford et al.
patent: 6722942 (2004-04-01), Lansford et al.
patent: 6736952 (2004-05-01), Emesh et al.
patent: 6753250 (2004-06-01), Hill et al.
patent: 6776693 (2004-08-01), Duboust et al.
patent: 6780772 (2004-08-01), Uzoh et al.
patent: 2001/0025976 (2001-10-01), Lee
patent: 2001/0036746 (2001-11-01), Sato et al.
patent: 2002/0025759 (2002-02-01), Lee et al.
patent: 2002/0025760 (2002-02-01), Lee et al.
patent: 2002/0025763 (2002-02-01), Lee et al.
patent: 2002/0052126 (2002-05-01), Lee et al.
patent: 2002/0070126 (2002-06-01), Sato et al.
patent: 2002/0086487 (2002-07-01), Chung
patent: 2002/0104764 (2002-08-01), Banerjee et al.
patent: 2002/0115283 (2002-08-01), Ho et al.
patent: 2003/0064669 (2003-04-01), Basol et al.
patent: 2003/0178320 (2003-09-01), Liu et al.
patent: 2004/0009668 (2004-01-01), Catabay et al.
patent: 2004/0192052 (2004-09-01), Mukherjee et al.
patent: 0459397 A2 (1991-12-01), None
patent: 1 123 956 (2001-08-01), None
patent: 2001077117 (2001-03-01), None
patent: WO 00/26443 A2 (2000-05-01), None
patent: WO 00/28586 A2 (2000-05-01), None
patent: WO 00/32356 (2000-06-01), None
patent: WO 00/59682 (2000-10-01), None
patent: WO 00/59008 A2 (2000-10-01), None
patent: WO 02/064314 (2002-08-01), None
U.S. patent application Ser. No. 09/651,779, Moore, filed Aug. 30, 2000.
U.S. patent application Ser. No. 09/651,808, Chopra et al., filed Aug. 30, 2000.
U.S. patent application Ser. No. 09/653,392, Chopra et al., filed Aug. 31, 2000.
U.S. patent application Ser. No. 10/090,869, Moore et al., filed Mar. 4, 2002.
U.S. patent application Ser. No. 10/230,463, Lee et al., filed Aug. 29, 2002.
U.S. patent application Ser. No. 10/230,973, Lee et al., filed Aug. 29, 2002.
U.S. patent application Ser. No. 10/230,628, Lee et al., filed Aug. 29, 2002.
U.S. patent application Ser. No. 10/230,970, Lee et al., filed Aug. 29, 2002.
U.S. patent application Ser. No. 10/230,972, Lee et al., filed Aug. 29, 2002.
D'Heurle, F.M. and K.C. Park, IBM Technical Disclosure Bulletin, Electrolytic Process for Metal Pattern Generation, vol. 17, No. 1, pp. 271-272, Jun. 1974, XP-002235691, NN 7406271.
Frankenthal, R.P. and Eaton, D.H., “Electroetching of Platinum in the Titanium-Platinum-Gold Metallization on Silicon Integrated Circuits,” Journal of The Electrochemical Society, vol. 123, No. 5, pp. 703-706, May 1976, Pennington, New Jersey.
Aboaf, J.A. and R.W. Broadie, IBM Technical Disclosure Bulletin, Rounding of Square-Shape Holes in Silicon Wafers, vol. 19, No. 8, p. 3042, Jan. 1977, XP-002235690, NN 77013042.
Bassous, E., IBM Technical Disclosure Bulletin, Low Temperature Methods for Rounding Silicon Nozzles, vol. 20, No. 2, Jul. 1977, pp. 8810-811, XP-002235692, NN 7707810.
Bernhardt, A.F., R.J. Contolini, and S.T. Mayer, “Electrochemical Planarization for Multi-Level Metallization of Microcircuitry,” CircuiTree, vol. 8, No. 10, pp. 38, 40, 42, 44, 46, and 48, Oct. 1995.
McGraw-Hill, “Chemical bonding,” Concise Encyclopedia of Science & Technology, Fourth Edition, Sybil P. Parker, Editor in Chief, p. 367, McGraw-Hill, New York, New York, 1998.
PhysicsWorld. Hard Materials (excerpt of Superhard superlattices) [online]. S. Barnett and A. Madan, Physics World, Jan. 1998, Institute of Physics Publishing Ltd., Bristol, United Kingdom. Retrieved from the Internet on Jul. 29, 2002. <URL: http://physicsweb.org/box/world/11/1/11/world-11-1-11-1>.
Huang, C.S. et al., “A Novel UV Baking Process to Improve DUV Photoresist Hardness,” pp. 135-138, Proceedings of the
Gurley Lynne
Micro)n Technology, Inc.
Perkins Coie LLP
LandOfFree
Method for simultaneously removing multiple conductive... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for simultaneously removing multiple conductive..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for simultaneously removing multiple conductive... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3714517