MOS field effect transistor with reduced parasitic substrate...

Details MOS field effect transistor with reduced parasitic substrate... MOS field effect transistor with reduced parasitic substrate...

2006-12-05

2006-12-05

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S273000, C257S373000, C257S401000, C257S557000, C257S565000, C257S590000

Reexamination Certificate

active

07145206

ABSTRACT:
A MOS field effect transistor includes an auxiliary diffusion formed in the drain region where the auxiliary diffusion has a conductivity type opposite to the drain region and is electrically shorted to the drain region. The auxiliary diffusion region forms a parasitic bipolar transistor having the effect of reducing substrate conduction caused by a forward biased drain to body junction.

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European Search Report, 5 pages—Jun. 23, 2005.

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