Memory device with two ferroelectric capacitors per one cell

Details Memory device with two ferroelectric capacitors per one cell Memory device with two ferroelectric capacitors per one cell

1999-03-31

2000-04-04

Nelms, David

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, G11C 1122

Patent

active

060469293

ABSTRACT:
The source region and gate electrode of a field effect transistor including a drain region and a gate electrode in addition to the source region are connected by a first ferroelectric capacitor. The drain region and gate electrode are connected by a second ferroelectric capacitor. A ferroelectric memory device suitable for high integration is provided.

REFERENCES:
patent: 5903492 (1999-05-01), Takashima
JP-A 5-90607 Laid-open: Apr. 9, 1993.

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