Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2006-10-10

2006-10-10

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S336000, C257SE29278, C257SE21435, C257S344000

Reexamination Certificate

active

07119408

ABSTRACT:
A semiconductor device of the present invention includes, as a peripheral MIS transistor25b, a gate insulating film13band a gate electrode14bprovided above an active region10b, first and second sidewalls19band23bprovided on side surfaces of the gate electrode14b, n-type source and drain regions24bprovided away from each other in the active region, nitrogen diffusion layers18provided below the outer sides of the gate electrode14b, n-type extension regions16containing arsenic and provided in regions of the active region10blocated below the outer sides of the gate electrode14bso that the n-type extension regions16cover the inner side surfaces and the bottom surfaces of the nitrogen diffusion layers18, respectively, and n-type dopant regions17containing phosphorus and provided in regions of the active region10blocated below the outer sides of the gate electrode14band deeper than the n-type extension regions16.

REFERENCES:
patent: 6232187 (2001-05-01), Kuroi et al.
patent: 6437406 (2002-08-01), Lee
patent: 6576965 (2003-06-01), Eikyu et al.
patent: 2003/0075765 (2003-04-01), Ohnakado et al.
patent: 09-064362 (1997-03-01), None

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