Semiconductor element and semiconductor memory device using...

Details Semiconductor element and semiconductor memory device using... Semiconductor element and semiconductor memory device using...

2006-06-13

2006-06-13

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S365000

Reexamination Certificate

active

07061053

ABSTRACT:
A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.

REFERENCES:
patent: 3878549 (1975-04-01), Yamazaki et al.
patent: 4047974 (1977-09-01), Harari et al.
patent: 4173791 (1979-11-01), Bell
patent: 4503447 (1985-03-01), Iafrate et al.
patent: 4987463 (1991-01-01), Goronkin et al.
patent: 5019882 (1991-05-01), Solomon et al.
patent: 5357134 (1994-10-01), Shimoji
patent: 5420055 (1995-05-01), Vu et al.
patent: 6674117 (2004-01-01), Yano et al.
patent: 6787841 (2004-09-01), Yano et al.
patent: 2149303 (1972-04-01), None
patent: 0107039 (1984-05-01), None
patent: 0366146 (1990-05-01), None
patent: 1297899 (1972-11-01), None
patent: 52-13782 (1977-02-01), None
patent: 59-74680 (1984-04-01), None
patent: 3-141676 (1991-06-01), None
patent: 5-129630 (1993-05-01), None
J. Chang, “Nonvolatile Semiconductor Memory Devices”, Proceedings of the IEEE, vol. 64, No. 7, Jul. 1976, pp. 1038-1059.
Nakazato, et al., “Single-Electron Memory”, Electronics Letters, Feb. 18, 1993, vol. 29, No. 4, pp. 384-385.
Thomas, et al., “Conductance Oscillations Periodic in the Density of a One-Dimensional Electron Gas”, Physical Review Letters, Jan. 30, 1988, vol. 62, No. 5, pp. 583-586.

Affiliated with

Also associated with

Rating

Semiconductor element and semiconductor memory device using... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor element and semiconductor memory device using..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor element and semiconductor memory device using... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3710398