Nonvolatile semiconductor memory device including improved...

Details Nonvolatile semiconductor memory device including improved... Nonvolatile semiconductor memory device including improved...

2006-10-17

2006-10-17

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S319000, C257S330000, C257SE29260

Reexamination Certificate

active

07122858

ABSTRACT:
A floating gate is formed on a semiconductor substrate via a gate insulating film. Diffused layers are formed as sources or drain regions on opposite sides of the floating gate in the semiconductor substrate. First and second control gates are formed opposite to both of the diffused layers on the opposite sides of the floating gate via an inter-gate insulating film to drive the floating gate.

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Y. Sasago, et al., 10 MB/s Multi-Level Programming of Gb-Scale Flash Memory Enabled by New AG-AND Cell Technology 2002 IEEE, pp. 952-954 IEDM, 21.6.1.

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