Method of manufacturing semiconductor device having first...

Details Method of manufacturing semiconductor device having first... Method of manufacturing semiconductor device having first...

2006-02-21

2006-02-21

Tran, Thien F. (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S157000, C438S159000, C438S176000, C438S283000

Reexamination Certificate

active

07001801

ABSTRACT:
In order to increase an aperture ratio, a part of or all of a gate electrode that overlaps with channel formation regions (213, 214) of a pixel TFT is caused to overlap with second wirings (source line or drain line) (154, 157). Additionally, a first interlayer insulating film (149) and a second interlayer insulating film (150c) are disposed between the gate electrode and the second wirings (154, 157) so as to decrease a parasitic capacitance.

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