Method for manufacture of semiconductor device

Details Method for manufacture of semiconductor device Method for manufacture of semiconductor device

2006-12-26

2006-12-26

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S063000, C365S149000

Reexamination Certificate

active

07154767

ABSTRACT:
A method for the manufacture of a ferroelectric memory. The ferroelectric memory includes a plurality of memory cells for storing binary data as polarization states of a ferroelectric. The method includes a data writing step of writing those binary data which will be read at a potential level lower than a reference potential level during data reading, to all of the memory cells prior to a heat treatment step.

REFERENCES:
patent: 6434038 (2002-08-01), Ohno
patent: 6990005 (2006-01-01), Saito
patent: 2003/0103405 (2003-06-01), Mano et al.
patent: 09-064291 (1997-03-01), None
patent: 2002-093194 (2002-03-01), None

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