Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-08
2006-08-08
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S424000, C257S390000
Reexamination Certificate
active
07087960
ABSTRACT:
A gate oxide film and a first layer of a multilayered gate electrode are stacked on a substrate and by a gate prefabrication technique, an oxide layer of an element isolation region is formed in a self-alignment manner using the first layer of the gate electrode as a mask, impurities for a transistor channel control are doped by ion implantation via the first layer of the gate electrode and the gate oxide film, and the doped impurities are activated by a heating step, whereby an impurity profile at the transistor channel portion is precisely formed.
REFERENCES:
patent: 5670404 (1997-09-01), Dai
patent: 6005270 (1999-12-01), Noguchi
patent: 6043533 (2000-03-01), Gardner et al.
patent: 6049113 (2000-04-01), Shida
patent: 6245639 (2001-06-01), Tsai et al.
patent: 6281050 (2001-08-01), Sakagami
patent: 6297082 (2001-10-01), Lin et al.
patent: 6300655 (2001-10-01), Ema et al.
patent: 02-246227 (1990-10-01), None
patent: 6-268178 (1994-09-01), None
patent: 406268178 (1994-09-01), None
patent: 2000-0035711 (2000-06-01), None
T. Ukeda, et al., “High Reliability Trench Isolation Technology with Elevated Field Oxide Structure for Sub-Quarter Micron CMOS Devices” Solid State Devices and Materials, Yokohama 1996, pp. 260-262.
F. Arai, et al., “High Density (4.4 F2) NAND Flash Technology Using Super-Shallow Channel Profile (SSCP) Engineering”, IEEE, 2000, pp. 775-778.
Seijiro Furukawa, “Semiconductor Device”, Corona Co., Ltd. pp. 57-59.
S. M Sea, Supervised Translated by: Takeishi, Nishi, Kayama, “Ultra-LSI Technology”, Soken Shuppan, pp. 230-237.
An article supervised by Takuo Sugano and edited Tetsuya Iizuka, “Design of CMOS Ultra-LSI”, Baifu-kan, pp. 192-193.
Rose Kiesha
Smith Zandra V.
LandOfFree
Semiconductor device including impurities in substrate via... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device including impurities in substrate via..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including impurities in substrate via... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3708659