Method of forming a non-volatile electron storage memory and...

Details Method of forming a non-volatile electron storage memory and... Method of forming a non-volatile electron storage memory and...

2006-02-28

2006-02-28

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S410000, C257S412000, C438S211000, C438S257000, C438S593000, C438S686000, C977S726000

Reexamination Certificate

active

07005697

ABSTRACT:
The invention provides a method of forming an electron memory storage device and the resulting device. The device comprises a gate structure which, in form, comprises a first gate insulating layer formed over a semiconductor substrate, a self-forming electron trapping layer of noble metal nano-crystals formed over the first gate insulating layer, a second gate insulating layer formed over the electron trapping layer, a gate electrode formed over the second gate insulating layer, and source and drain regions formed on opposite sides of the gate structure.

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