Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-31
2006-10-31
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S321000
Reexamination Certificate
active
07129537
ABSTRACT:
A stacked gate flash memory device and method of fabricating the same. A cell of the stacked gate flash memory device is disposed in a cell trench within a substrate to achieve higher integration of memory cells.
REFERENCES:
patent: 6002151 (1999-12-01), Liu et al.
patent: 6952034 (2005-10-01), Hu et al.
Nanya Technology Corporation
Pham Hoai
Quintero Law Office
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