Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2006-11-07
2006-11-07
Lebentritt, Michael (Department: 2824)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C438S149000, C438S150000, C438S166000, C438S308000, C438S487000
Reexamination Certificate
active
07132375
ABSTRACT:
A technique is provided for forming a crystalline semiconductor film whose orientation is uniform by control of crystal orientation and obtaining a crystalline semiconductor film in which concentration of an impurity is reduced. A configuration of the invention is that a first semiconductor region is formed on a substrate having transparent characteristics of a visible light region, a barrier film is formed over the first semiconductor region, a heat retaining film covering a top and side surfaces of the first semiconductor region is formed over the barrier film, the first semiconductor region is crystallized by scanning a continuous wave laser beam from one edge of the first semiconductor region to the other through the substrate, then the heat retaining film and the barrier film are removed and a second semiconductor region is formed as an active layer of TFT by etching the crystallized first semiconductor region. A pattern of the second semiconductor region formed by etching is formed in a manner that a scanning direction of the laser beam and a channel length direction of the TFT are arranged in almost the same direction in order to smooth drift of carriers.
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Costellia Jeffrey L.
Lebentritt Michael
Lee Cheung
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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