Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-06-27
2006-06-27
Luu, Chuong Anh (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S646000, C438S596000
Reexamination Certificate
active
07067412
ABSTRACT:
The present invention provides a semiconductor device including a plurality of wirings or conductive film patterns formed on a semiconductor substrate, and clearances are provided between the wirings or the conductive film patterns. On a corner or an end part of at least one of the wirings or the conductive film patterns, protrusions are formed to protrude, facing the clearances between the wirings or the conductive film patterns. Thereby, defects will not occur in the insulating protective film after an etching step for forming an aperture for exposing a bonding pad, and thus, a semiconductor device is manufactured without being subjected to an additional process that raises the manufacturing cost. The present invention provides also a method of manufacturing the semiconductor device.
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Hamre Schumann Mueller & Larson P.C.
Luu Chuong Anh
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