Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-28
2006-02-28
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S059000, C257S072000
Reexamination Certificate
active
07005707
ABSTRACT:
A structure of an electrostatic discharge protection circuit comprises a plurality of thin film transistors and at least a point structure, wherein each of the thin film transistors comprises a gate and a source/drain. The point structure configures at least a portion of a tail or an edge of the gate. In particular, the point structure is located at region apart from the source/drain. The point structures are disposed at prescribed areas apart from devices, and thereby the devices of the electrostatic discharge protection circuit are free from electrostatic discharges.
REFERENCES:
patent: 5798534 (1998-08-01), Young
Au Optronics Corporation
J.C. Patents
Weiss Howard
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