Electrostatic discharge protection circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S059000, C257S072000

Reexamination Certificate

active

07005707

ABSTRACT:
A structure of an electrostatic discharge protection circuit comprises a plurality of thin film transistors and at least a point structure, wherein each of the thin film transistors comprises a gate and a source/drain. The point structure configures at least a portion of a tail or an edge of the gate. In particular, the point structure is located at region apart from the source/drain. The point structures are disposed at prescribed areas apart from devices, and thereby the devices of the electrostatic discharge protection circuit are free from electrostatic discharges.

REFERENCES:
patent: 5798534 (1998-08-01), Young

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