Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-06-06
2006-06-06
Parker, Kenneth (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S030000, C349S042000, C349S043000
Reexamination Certificate
active
07056777
ABSTRACT:
A thin film transistor array substrate including a gate pattern having a gate electrode, a gate line connected to the gate electrode, and a gate pad connected to the gate line, a source/drain pattern having a source electrode, a drain electrode, a data line connected to the source electrode, and a data pad connected to the data line, a gate insulating pattern formed along a matrix pattern including the gate pattern and the source/drain pattern except for a pixel area, a semiconductor pattern formed on the gate insulating pattern having a same pattern as the gate insulating pattern and partially removed at a thin film transistor area and the gate line area, and a transparent electrode pattern having a pixel electrode formed at the pixel area and connected to the drain electrode, a gate pad protective electrode formed on the gate pad, and a data pad protective electrode formed on the data pad.
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Cho Heung Lyul
Kim Woong Kwon
Landau Matthew
LG.Philips LCD Co. , Ltd.
Morgan & Lewis & Bockius, LLP
Parker Kenneth
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