Semiconductor memory device and method of manufacturing the...

Details Semiconductor memory device and method of manufacturing the... Semiconductor memory device and method of manufacturing the...

2006-08-01

2006-08-01

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S300000

Reexamination Certificate

active

07084450

ABSTRACT:
A semiconductor memory device includes an element region and an element-isolating region provided on a semiconductor substrate, a capacitor formed in a trench, a first insulating film formed on a side surface of the trench on the capacitor, a first conductive layer provided on the first insulating film and the capacitor so as to bury the trench, a second insulating film provided on a side surface of the trench and on the first insulating film and on both side surfaces of the element region, a gate electrode provided on the element region through a gate insulating film, a source region and a drain region provided in the element region, and a contact layer provided on the first conductive layer and the element region to connect the first conductive layer with the source region or the drain region.

REFERENCES:
patent: 6310375 (2001-10-01), Schrems
patent: 6515327 (2003-02-01), King
patent: 10-321813 (1998-12-01), None
patent: 11-26707 (1999-01-01), None
patent: 2001-345433 (2001-12-01), None
patent: 2002-118240 (2002-04-01), None
patent: 2003-282734 (2003-10-01), None

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