Nonvolatile semiconductor memory and manufacturing method...

Details Nonvolatile semiconductor memory and manufacturing method... Nonvolatile semiconductor memory and manufacturing method...

2006-02-28

2006-02-28

Wilson, Christian D. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S315000, C257S324000, C257S410000

Reexamination Certificate

active

07005714

ABSTRACT:
The memory cell matrix encompasses (a) a plurality device isolation films running along column direction, (b) first conductive layers arranged along row and column-directions, adjacent groups of the first conductive layers are isolated from each other by the device isolation film disposed between the adjacent groups, (c) lower inter-electrode dielectrics arranged respectively on crests of the corresponding first conductive layers, (d) an upper inter-electrode dielectric arranged on the lower inter-electrode dielectric made of insulating material different from the lower inter-electrode dielectrics, and (e) second conductive layers running along the row-direction, arranged on the upper inter-electrode dielectric.

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