Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2006-10-17
2006-10-17
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
Reexamination Certificate
active
07122476
ABSTRACT:
In order to reduce the SAS resistance at the cell region with low process cost, a method for fabricating a semiconductor device according to the present invention includes forming a protection layer on a semiconductor substrate on which a cell region and a peripheral region are defined, forming a first trench and a second trench at the respective cell and the peripheral regions by selectively etching the protection layer and the semiconductor substrate, and deepening the second trench by further etching the peripheral region while the cell region being blocked and the peripheral region being exposed.
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Dongbu Electronic Co., Ltd.
Geyer Scott B.
Pillsbury Winthrop Shaw & Pittman LLP
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