Method of etching ferroelectric devices

Details Method of etching ferroelectric devices Method of etching ferroelectric devices

2006-08-29

2006-08-29

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S717000, C438S720000

Reexamination Certificate

active

07098142

ABSTRACT:
A method of etching a ferroelectric device100having a ferroelectric layer112between a top and a bottom electrode114, 108is disclosed herein. Hardmasks116, 118are deposited on the top electrode114, two or more hardmasks being spaced apart by narrow first regions115and spaced apart from other hardmasks by wider second regions117. The top electrode114and ferroelectric layer112are then etched to pattern the top electrode114thus forming capacitors102, 104, and the bottom electrode108is etched by a process in which the second regions are etched more slowly than the second regions. Those capacitors having a first region between them have a common bottom electrode108, but in the second regions the bottom electrode is severed. To pattern the bottom electrode108, a fluorine-based chemistry followed thereafter by a CO-based chemistry are used in a two step etching process.

REFERENCES:
patent: 6165909 (2000-12-01), Linliu
patent: 6235573 (2001-05-01), Lee et al.
patent: 6288423 (2001-09-01), Sugaya
patent: 6500678 (2002-12-01), Aggarwal et al.
patent: 6573167 (2003-06-01), Xing et al.
patent: 2001/0022372 (2001-09-01), Kanaya et al.
patent: 2001/0041416 (2001-11-01), Torii et al.
patent: 2002/0006674 (2002-01-01), Ma et al.
patent: 2003/0022494 (2003-01-01), Ying et al.
patent: 2004/0072442 (2004-04-01), Celii et al.
patent: WO03/012838 (2003-02-01), None

Affiliated with

Also associated with

Rating

Method of etching ferroelectric devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of etching ferroelectric devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of etching ferroelectric devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3700731