Trench-gate semiconductor devices

Details Trench-gate semiconductor devices Trench-gate semiconductor devices

2006-10-17

2006-10-17

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S332000, C257S334000

Reexamination Certificate

active

07122860

ABSTRACT:
A trench-gate semiconductor device, for example a MOSFET or IGBT, includes a semiconductor body (20) having a drain region (4) comprising a drain drift region (4a) and a drain contact region (4b). An insulated field plate (24) is included in the trench (10) between the gate (8) and the drain contact region (4b), wherein the field plate (24) is for connection to a bias potential greater than the gate potential and near to the bulk breakdown voltage of the drain drift region (4a). The field plate (24) causes the potential drop across the drain drift region (4a) to be spread considerably more evenly, particularly at applied voltages greater than the bulk breakdown voltage, thereby substantially increasing the breakdown voltage of the device.

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patent: WO 02/13257 (2002-02-01), None

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