Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-10-03
2006-10-03
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S164000
Reexamination Certificate
active
07115447
ABSTRACT:
A gate electrode is formed of a laminate structure comprising a plurality of conductive layers such that the width along the channel of a lower first conductive layer is larger than that of an upper second conductive layer. The gate electrode is used as a mask during ion doping for forming an LDD. A mask pattern for forming the gate electrode is processed into an optimum shape in combination with dry etching so that the LDD overlapping with the gate electrode (Lov) is 1 μm or more, and preferably, 1.5 μm or more.
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Fish & Richardson P.C.
Fourson George
Semiconductor Energy Laboratory Co,. Ltd.
Toledo Fernando L.
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