Near-field exposure method

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S319000, C430S321000

Reexamination Certificate

active

07144682

ABSTRACT:
A method for exposing a workpiece on the basis of near-field light escaping from an exposure mask having a light blocking film with a plurality of rectangular openings. The method includes protecting non-polarized near-field exposure light from a light source through the openings of the exposure mask to perform exposure of a pattern on the workpiece. The widths of the rectangular openings are smaller than that at a cross-point between a first curve on a coordinate of widths of the openings versus a near-field light intensity for an incident-light electric-field direction perpendicular to a lengthwise direction of a small-opening pattern and a second curve on the same coordinate for an incident-light electric-field direction parallel to the lengthwise direction of the small-opening pattern.

REFERENCES:
patent: 6171730 (2001-01-01), Kuroda et al.
patent: 6187482 (2001-02-01), Kuroda et al.
patent: 6236033 (2001-05-01), Ebbesen et al.
patent: 6243348 (2001-06-01), Goodberlet
patent: 6303276 (2001-10-01), Savant et al.
patent: 6559926 (2003-05-01), Yamaguchi et al.
patent: 6573959 (2003-06-01), Molsen
patent: 2001/0046719 (2001-11-01), Yamaguchi et al.
patent: 2002/0015919 (2002-02-01), Kristensen et al.
patent: 2002/0071106 (2002-06-01), Yano et al.
patent: 2002/0196420 (2002-12-01), Naya
patent: 2003/0128361 (2003-07-01), Kuroda et al.
patent: 2005/0026047 (2005-02-01), Yang
patent: 2000-112116 (2000-04-01), None
Alkaisi, M. M. et al., “Sub-diffraction-limited patterning using evanescent near-field optical lithography”, (1999) Applied Physics Letters, vol. 75, No. 22, pp. 3560-3562.
Blaikie, R. J., et al. “Nanolithography Using Optical Contact Exposure in Evanescent Near Field,”Microelectronic Engineering, vol. 56, No. 1-4, May 1999. Elsevier Publishers BV, Amsterdam. pp. 85-88.
Alkaisi, M. M., et al. “70 nm Features on 140 nm Period Using Evanescent Near Field Optical Lithography,”Microelectronic Engineering, vol. 53, No. 1-4, Jun. 2000. Elsevier Publishers BV, Amsterdam. pp. 237-240.
Alkaisi, M. M., et al. “Nanolithography in th Evanescent Near Field,”Advanced Materials, vol. 13, No. 12/13, Jul. 4, 2001. VCH Verlagsgesellschaft, Weinheim, DE. pp. 877-887.
PCT International Search Report dated Jul. 6, 2004, issued in corresponding PCT patent appln. No. PCT/JP03/11357, mailed Jul. 14, 2004.
Alkaisi, M. M., et al., “Sub-diffraction-limited patterning using evanescent near-field optical lithography,” Appl. Phys. Lett. vol. 75(22), Nov. 29, 1999. pp. 3560-3562.
Blaikie, R. J., et al., “Nanolithography Using Optical Contact Exposure in the Evanescent Near Field,” Microelectron. Eng. 46(1), May 31, 1999. pp. 85-88.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Near-field exposure method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Near-field exposure method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Near-field exposure method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3698950

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.