MOSFET structures with conductive niobium oxide gates

Details MOSFET structures with conductive niobium oxide gates MOSFET structures with conductive niobium oxide gates

2006-10-31

2006-10-31

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S412000

Reexamination Certificate

active

07129552

ABSTRACT:
MOSFET gate structures are provided comprising a niobium monoxide gate, overlying a gate dielectric. The niobium monoxide gate may have a low work function suitable for use as an NMOS gate.

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patent: 9-218172 (1997-08-01), None
T. P. Ma, “High-k Gate Dielectrics for Scaled CMOS Technology,” Proc. 6thInt'l Conf. on Solid State and IC Tech., Oct. 22-25, 2001, pp. 297-302.
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“Work Function Determination of Zinc Oxide Films” by Sundaram et al., pp. 674-676, 1996 IEEE.
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Article entitled: A Phase Map for Sputter Deposited Niobium Oxides, by Lee and Aita, pub in the Journal of Applied Physics, vol. 70, No. 4, Aug. 15, 1991.

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