Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-07
2006-11-07
Thai, Luan (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S421000, C257S659000, C257SE27006
Reexamination Certificate
active
07132707
ABSTRACT:
An MTJ MRAM cell is formed above or below an intersection of vertically separated, magnetically clad, ultra-thin orthogonal word and bit lines whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The word and bit lines also include a soft magnetic layer of high permeability formed on their surfaces distal from the cell to improve the magnetic field still further. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions and eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.
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“A 0.18μm Logic-based MRAM Technology for High Performance Nonvolatile Memory Applications,” by A.R.Sitaram et al., MRAM Development Alliance, IBM/ Infinear Technologies, IBM Semiconductor Research and Development Center, Hopewell Jctn, NY, USA.
Co-pending “Magnetic Random Access Memory Array With Thin Conduction Electrical Read and Write Lines,” U.S. Appl. No. 10/892,668, filed Jul. 16, 2004, assigned to the same assignee.
Guo Yimin
Min Tai
Wang Pokang
Ackerman Stephen B.
Applied Spintronics Inc.
Headway Technologies Inc.
Saile Ackerman LLC
Thai Luan
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