Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-19
2006-12-19
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S305000, C257S332000
Reexamination Certificate
active
07151290
ABSTRACT:
A semiconductor device includes a conductive film that is filled in a trench formed in a semiconductor substrate via a first insulating film. The conductive film has a first portion and a second portion with an upper surface higher than the first portion. A second insulating film provided on the first portion of the conductive film has a first portion and a second portion whose upper surface is higher than the surface of the semiconductor substrate. The first portion of the second insulating film contacts the second portion of the second insulating film and has an upper surface lower than the surface of the second portion of the conductive film. A first gate electrode and a second gate electrode are provided on the second insulating film and above the semiconductor substrate, respectively. A connection conductive layer extends on the conductive film and on one of source/drain diffusion layers.
REFERENCES:
patent: 5736750 (1998-04-01), Yamazaki et al.
patent: 2005/0048715 (2005-03-01), Rupp et al.
patent: 6-120446 (1994-04-01), None
patent: 6-209088 (1994-07-01), None
patent: 11-177043 (1999-07-01), None
patent: 2001-345433 (2001-12-01), None
U.S. Appl. No. 10/644,415, filed Aug. 20, 2003, Kito et al.
U.S. Appl. No. 10/806,398, filed Mar. 23, 2004, Kito et al.
Kabushiki Kaisha Toshiba
Pham Long
LandOfFree
Semiconductor memory device and method of manufacturing the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device and method of manufacturing the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device and method of manufacturing the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3694850