Method of estimating substrate temperature

Details Method of estimating substrate temperature Method of estimating substrate temperature

2006-10-31

2006-10-31

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S933000

Reexamination Certificate

active

07129168

ABSTRACT:
A method of estimating substrate temperature according to this invention includes the steps of epitaxially growing a Si-containing layer (103) on a SiGe layer (102) formed on a substrate for temperature estimation (101) constituted of a Si substrate under a reaction control condition; finding a relationship between a rate of growth of the Si-containing layer and a substrate temperature of the substrate for temperature estimation; epitaxially growing a Si-containing layer on a substrate for device fabrication as a subject of substrate temperature estimation under a reaction control condition; and estimating a substrate temperature of the substrate for device fabrication based on the rate of growth of the latter Si-containing layer and the relationship between the rate of growth of the former Si-containing layer (103) and the substrate temperature of the substrate for temperature estimation.

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