Semiconductor device

Details Semiconductor device Semiconductor device

2006-11-14

2006-11-14

Abraham, Fetsum (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C438S238000, C438S239000, C438S242000

Reexamination Certificate

active

07135732

ABSTRACT:
In order to supply a semiconductor device having high-reliability, there are used a first capacitor electrode, a capacitor insulating film formed in contact with the first capacitor electrode and mainly composed of titanium oxide, and a second capacitor electrode formed in contact with the capacitor insulating film, and there is used a conductive oxide film mainly composed of ruthenium oxide or iridium oxide for the first capacitor electrode and the second capacitor electrode. Alternatively, there is used a gate insulating film having a titanium silicate film and titanium oxide which suppress leakage current.

REFERENCES:
patent: 4200474 (1980-04-01), Morris
patent: 5185689 (1993-02-01), Maniar
patent: 6156606 (2000-12-01), Michaelis
patent: 6200866 (2001-03-01), Ma et al.
patent: 6326670 (2001-12-01), Nishiyama et al.
patent: 6475911 (2002-11-01), Lane
patent: 1 096 042 (2001-05-01), None
patent: 7263572 (1995-10-01), None
patent: 09-186299 (1997-07-01), None
patent: 10-041467 (1998-02-01), None
patent: 2000-058831 (2000-02-01), None
patent: 2000-260979 (2000-09-01), None
patent: 2002-217409 (2002-08-01), None
patent: 2002217410 (2002-08-01), None
patent: 10-0290223 (1994-04-01), None
patent: 2000-0035492 (1998-11-01), None
Benito Decelis, et al, “Molecular Dynamics Simulation of Crack Tip Processes in Alpha-Iron and Copper”, J. APPL. Phys. 54 (9), Sep. 1983, pp. 4864-4878.
Thomas Kwok, et al., “Molecular-Dynamics Studies of Grain-Boundary Diffusion. II Vacancy Migration, Diffusion Mechanism, and Kinetics”, 1984 The American Physical Society, pp. 5363-5371.
S. A. Campbell, et al., “Titanium Dioxide (TiO2)-Based Gate Insulators”, IBM Journal of Research and Development, vol. 43, No. 3, May 1999. pp. 383-391.
Nikkei Microdevices, Mar. 2001, pp. 114-123.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3693159