Memory cell

Details Memory cell Memory cell

2006-02-14

2006-02-14

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S319000, C257S320000, C257S335000, C257S336000, C257S337000, C257S338000, C257S339000, C257S340000, C257S341000, C257S342000, C257S343000

Reexamination Certificate

active

06998672

ABSTRACT:
A memory cell having a source region, a drain region, a source-end control gate, a drain-end control gate, an injection gate arranged between the source-end control gate and the drain-end control gate, a source-end storage element arranged in the source-end control gate, and a drain-end storage element arranged in the drain-end control gate. To program the memory cell, a low electrical voltage is applied to the injection gate, and a high electrical voltage is applied to the control gates.

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