Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-26
2006-12-26
Luu, Chuong Anh (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S315000, C257S316000
Reexamination Certificate
active
07154138
ABSTRACT:
The invention relates to a transistor arrangement having a substrate and a vertical transistor comprising: a first electrode region, a second electrode region arranged essentially above the latter, and, in between, a channel region, and also a gate region beside the channel region and, in between, an electrically insulating layer sequence, wherein two mutually spatially separate sections of the electrically insulating layer sequence in each case serve for the storage of charge carriers.
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Hofmann Franz
Willer Josef
Dicke Billig & Czaja, PLLC
Infineon - Technologies AG
Luu Chuong Anh
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