Semiconductor structure with integrated shield

Details Semiconductor structure with integrated shield Semiconductor structure with integrated shield

2006-06-06

2006-06-06

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S317000, C365S185040

Reexamination Certificate

active

07057232

ABSTRACT:
A semiconductor structure comprises a memory element, which comprises a floating gate, a control electrode, which is capacitively coupled to the floating gate, wherein a signal for controlling the memory element is applicable to the control electrode, as well as a shield, which is arranged isolated from the floating gate and covers it fully.

REFERENCES:
patent: 4970565 (1990-11-01), Wu et al.
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patent: 5440510 (1995-08-01), Caprara et al.
patent: 6301158 (2001-10-01), Iwahashi
patent: 6614684 (2003-09-01), Shukuri et al.
patent: 2001/0025980 (2001-10-01), Bottini et al.
patent: 2002/0102794 (2002-08-01), Hisamune et al.

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