Non-volatile flash memory device

Details Non-volatile flash memory device Non-volatile flash memory device

2006-11-14

2006-11-14

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S320000, C257S326000

Reexamination Certificate

active

07135737

ABSTRACT:
A non-volatile memory device having sidewall floating gates implementing two bits with just one transistor is disclosed. A disclosed method comprises a non-volatile memory device having a unit cell comprising: a transistor including a polysilicon gate, sidewall floating gates, block oxide layers and source and drain regions; a word line vertically placed on a substrate and connected to the polysilicon gate; and a pair of bit lines orthogonally placed to the word line and connected to the source and drain regions.

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