Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-08-29
2006-08-29
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S653000, C257SE21019, C257SE21584
Reexamination Certificate
active
07098134
ABSTRACT:
A method of fabricating a semiconductor device is provided, by which oxide on a Cu surface after via-etch can be removed using Hf (hafnium) as a barrier material. The method includes the steps of forming a Cu line in at least one protective insulating layer on a substrate, forming a via hole in the protective insulating layer to expose a portion of the Cu line, forming an Hf-containing layer in the via hole to cover the exposed portion of the embedded Cu line, and forming a conductive layer over the Hf-containing layer.
REFERENCES:
patent: 6069068 (2000-05-01), Rathore et al.
patent: 6130161 (2000-10-01), Ashley et al.
patent: 6180523 (2001-01-01), Lee et al.
patent: 6235633 (2001-05-01), Jang
patent: 6248632 (2001-06-01), Jang et al.
patent: 6258710 (2001-07-01), Rathore et al.
patent: 6287954 (2001-09-01), Ashley et al.
patent: 6331485 (2001-12-01), Miyamoto
patent: 6348731 (2002-02-01), Ashley et al.
patent: 6461914 (2002-10-01), Roberts et al.
patent: 6476454 (2002-11-01), Suguro
patent: 6583021 (2003-06-01), Song
patent: 6607958 (2003-08-01), Suguro
patent: 6750541 (2004-06-01), Ohtsuka et al.
patent: 6764899 (2004-07-01), Yoon
patent: 6838352 (2005-01-01), Zhao
patent: 6949461 (2005-09-01), Malhotra et al.
patent: 6992005 (2006-01-01), Ohtsuka et al.
patent: 2001/0025999 (2001-10-01), Suguro
patent: 2002/0158338 (2002-10-01), Ohtsuka et al.
patent: 2003/0011043 (2003-01-01), Roberts
patent: 2003/0027393 (2003-02-01), Suguro
patent: 2004/0087135 (2004-05-01), Canaperi et al.
patent: 2004/0188839 (2004-09-01), Ohtsuka et al.
patent: 2004/0192021 (2004-09-01), Li
patent: 2002-0003003 (2002-01-01), None
Chan Lim; Method for Forming Hafnium Oxide Layer Using Atomic Layer Deposition Method; Korean Patent Abstracts; Publication No. 10-2002-0003003, Oct. 1, 2002, 9 pages; Korean Intellectual Property Office, Korea.
Jung Joo Kim; Method of Fabricating Semiconductor Device; U.S. Appl. No. 11/027,851, filed Dec. 29, 2004; 15 Pages and 2 Drawing Sheets; Assignee: DongbuAnam Semiconductor Inc.
Jung Joo Kim: Methods of Fabricating Via Hole and Trench; U.S. Appl. No. 11/027,435, filed Dec. 30, 2004; 10 Pages and 3 Drawing Sheets: Assignee: DongbuAnam Semiconductor Inc.
Dongbu Electronics Co. Ltd.
Everhart Caridad
Fortney Andrew D.
LandOfFree
Method for fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3690839