Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-13
2006-06-13
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S421000, C257SE27006, C257S758000
Reexamination Certificate
active
07061036
ABSTRACT:
Magnetic random access memory including a cell array stacked in a plurality of plane levels, a plurality of write wirings disposed on each of the stacked cell array, and a contact plug commonly or independently coupled to the plurality of stacked array planes. Also, a method for manufacturing magnetic random access memory so as to reduce influences of parasitic wiring resistances due to differences of the writing current values for supplying the stacked cell array. The magnetic random access memory includes a cell array of TMR elements stacked in a plurality of plane levels, a plurality of write wirings being formed so that a parasitic resistance becomes smaller accompanying a longer distance from a drive current source, and one or a plurality of contact plugs for commonly or independently coupling to the plurality of stacked array planes.
REFERENCES:
patent: 6440753 (2002-08-01), Ning et al.
patent: 6807087 (2004-10-01), Deak
patent: 2001/0023992 (2001-09-01), Doll
patent: 2002/0190291 (2002-12-01), Hosotani
Ho Tu-Tu
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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