Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-06-20
2006-06-20
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S166000, C438S479000, C438S487000
Reexamination Certificate
active
07064016
ABSTRACT:
To realize TFT enabling high-speed operation by fabricating a crystalline semiconductor film in which positions and sizes of crystal grains are controlled and using the crystalline semiconductor film in a channel forming region of TFT, a film thickness is stepped by providing a stepped difference in at least one layer of a matrix insulating film among a plurality of matrix insulating films having refractive indices different from each other. By irradiating laser beam from a rear face side of a substrate (or both sides of a surface side and the rear face side of the substrate), there is formed an effective intensity distribution of laser beam with regard to a semiconductor film and there is produced a temperature gradient in correspondence with a shape of the stepped difference and a distribution of the film thickness of the matrix insulating film in the semiconductor film. By utilizing thereof, a location of producing lateral growth and a direction thereof can be controlled to thereby enable to provide crystal grains having large particle sizes.
REFERENCES:
patent: 4888632 (1989-12-01), Haller
patent: 5254488 (1993-10-01), Haller
patent: 5550070 (1996-08-01), Funai et al.
patent: 5637512 (1997-06-01), Miyasaka et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5780903 (1998-07-01), Tsai et al.
patent: 5859683 (1999-01-01), Tagusa et al.
patent: 5893730 (1999-04-01), Yamazaki et al.
patent: 5894159 (1999-04-01), Mori et al.
patent: 5897346 (1999-04-01), Yamaguchi et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5943593 (1999-08-01), Noguchi et al.
patent: 6010923 (2000-01-01), Jinno
patent: 6133073 (2000-10-01), Yamazaki et al.
patent: 6291275 (2001-09-01), Yamazaki et al.
patent: 6309917 (2001-10-01), Furuta et al.
patent: 6338990 (2002-01-01), Yanai et al.
patent: 6458637 (2002-10-01), Yamazaki et al.
patent: 6746901 (2004-06-01), Kasahara et al.
patent: 0 651 431 (1995-05-01), None
patent: 07-183540 (1995-07-01), None
Ishihara et al., “Location-Controlled Adjacent Grains Following Excimer-Laser Melting of Si Thins-Films,” AM-LCD '98, pp. 153-156.
Kasahara Kenji
Kawasaki Ritsuko
Ohtani Hisashi
Fourson George
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Toledo Fernando L.
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