Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-26
2006-12-26
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S233000
Reexamination Certificate
active
07154137
ABSTRACT:
In a photodiode used in a pixel of an image sensor, the area of interface between an N-type region and a P-type region is increased, such as through the use of an interstitial P+-type region or an interstitial P-type region. By increasing the interface area, greater well capacity can be attained. Further, this also enhances depletion of the photodiode. By changing the shape of the N-type layer, an increase in the area of the interface between the P-type region and N-type layer can be attained. While the types of shapes used for the N-type layer are many, the present invention is directed towards a photodiode with an increased interface area between the P-type and N-type regions.
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European Search Report for European Application No. EP 05 25 6333, completed on Jan. 19, 2006, 3 pages.
Huynh Andy
OmniVision Technologies Inc.
Taylor Earl
LandOfFree
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