Semiconductor device

Details Semiconductor device Semiconductor device

2006-12-05

2006-12-05

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S368000, C257S382000

Reexamination Certificate

active

07145210

ABSTRACT:
A semiconductor device, which can improve the effect of a hydrogenation treatment in case of using a GOLD structure, and a method of manufacturing thereof is provided. A gate insulating film is formed on a semiconductor layer, and a source region, a drain region, and LDD regions are formed in the semiconductor layer. A main gate is formed on the gate insulating film. A sub-gate is formed on the main gate and the gate insulating film so as to cover a part of the main gate and either the LDD regions adjacent to the source region or the drain region. An interlayer insulating film containing hydrogen is formed on the sub-gate, main gate, and gate insulating film. Subsequently, a heat treatment for hydrogenation is performed to terminate a crystal defect of the semiconductor layer with hydrogen.

REFERENCES:
patent: 5272357 (1993-12-01), Morishita
patent: 6222238 (2001-04-01), Chang et al.
patent: 6486056 (2002-11-01), Pasch et al.
patent: 6639265 (2003-10-01), Arao et al.
patent: 2002/0175376 (2002-11-01), Ohtani et al.

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