Method for forming semiconductor device

Details Method for forming semiconductor device Method for forming semiconductor device

2006-02-07

2006-02-07

Cao, Phat X. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S153000

Reexamination Certificate

active

06995049

ABSTRACT:
In a method for forming a silicon-on-insulator FET having a contact that provides a fixed potential to a substrate, the substrate-biasing between the SOI transistor and the silicon substrate is performed via a plug. As a result, a contact hole for the substrate-biasing does not need to pass through the insulating layer, the silicon layer, and the interlayer insulating layer of the structure. Therefore, the interlayer insulating layer can be made to have shallow depth. Ions can thus be implanted to the surface of the substrate via the contact hole for substrate-biasing. The contact hole for substrate-biasing can be formed without causing an opening fault.

REFERENCES:
patent: 5914510 (1999-06-01), Hieda
patent: 6060738 (2000-05-01), Hidaka et al.
patent: 6133610 (2000-10-01), Bolam et al.
patent: 6632710 (2003-10-01), Takahashi

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