Poly/silicide stack and method of forming the same

Details Poly/silicide stack and method of forming the same Poly/silicide stack and method of forming the same

2006-12-19

2006-12-19

Flynn, Nathan J. (Department: 2826)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S585000, C438S296000, C438S303000, C438S305000, C257S368000, C257S413000

Reexamination Certificate

active

07151048

ABSTRACT:
A method of forming a semiconductor structure comprises forming sidewall oxide on a stack, by rapid thermal oxidation. The stack is on a substrate and comprises (i) a first layer comprising silicon, (ii) a second layer, comprising silicon and tungsten, on the first layer, and (iii) a capping layer, on the second layer. The sidewall oxide in contact with the second layer is at most 50% thicker than the sidewall oxide in contact with the first layer.

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