Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-21
2006-02-21
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S204000, C257S338000, C257S351000, C257S357000, C257S369000, C257S548000, C257S549000, C257S550000
Reexamination Certificate
active
07002222
ABSTRACT:
An integrated semiconductor circuit, having active components lying in mutually adjoining wells of a respective first and second conduction type, wherein the active components respectively are associated with substrate contacts lying in direct proximity to an edge bounding the mutually adjoining wells, is disclosed. Preferably, structures of the active components other than the contacts are arranged to lie further away from the edge and the circuit/layout structures are not mirror-symmetrical with respect to a center line of the circuit chip.
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Infineon - Technologies AG
Slater & Matsil L.L.P.
Soward Ida M.
Zarabian Amir
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