Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-06-13
2006-06-13
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S678000, C438S637000, C438S638000, C438S640000
Reexamination Certificate
active
07060617
ABSTRACT:
The present invention includes a method of providing a substrate; sequentially forming a seed layer over the substrate and forming a protection layer over the seed layer; and sequentially removing the protection layer and forming a conductor over the seed layer. The present invention further includes a structure having a substrate, the substrate having a device; an insulator disposed over the substrate, the insulator having an opening, the opening disposed over the device; a barrier layer disposed over the opening; a seed layer disposed over the barrier layer; and a protection layer disposed over the seed layer.
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J.P. Lu et al., “Understanding and Eliminating Defects in Electroplated Cu Films” Proceedings of the IEEE 2001 International Interconnect Technology Conference, Jun. 4-6, 2001, Burlingname, CA, pp. 280-282.
Dubin Valery M.
Moon Peter K.
Chen George
Nguyen Thanh
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