Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-12-19
2006-12-19
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S652000, C438S173000
Reexamination Certificate
active
07151016
ABSTRACT:
A method for manufacturing a semiconductor device having a circuit made up by a TFT (Thin Film Transistor) having GOLD (Gate-Drain Overlapped LDD) structure, which an LDD region overlaps which a portion of a gate electrode, wherein the formation of a concentration depth profile peak of hydrogen in a semiconductor film is avoided to thereby improve the electrical characteristics of the TFT. The use of the semiconductor film manufactured in this manner allows manufacturing of a semiconductor device with good electrical characteristics only by hydrogenating treatment even when the activation of impurity elements does not carried out.
REFERENCES:
patent: 4319395 (1982-03-01), Lund et al.
patent: 5292675 (1994-03-01), Codama
patent: 5397718 (1995-03-01), Furuta et al.
patent: 5719065 (1998-02-01), Takemura et al.
patent: 6274443 (2001-08-01), Yu et al.
patent: 6706568 (2004-03-01), Nakajima
patent: 2001/0031519 (2001-10-01), Ayres et al.
patent: 2001/0041392 (2001-11-01), Suzawa et al.
patent: 2002/0000551 (2002-01-01), Yamazaki et al.
patent: 2002/0016028 (2002-02-01), Arao et al.
patent: 2002/0052192 (2002-05-01), Yamazaki et al.
patent: 2002/0105033 (2002-08-01), Zhang
patent: 2002/0164842 (2002-11-01), Nakajima
patent: 2002/0182785 (2002-12-01), Miyairi
patent: 2003/0032221 (2003-02-01), Kasahara et al.
patent: 1 154 383 (2001-11-01), None
patent: 06-148685 (1994-05-01), None
patent: 08-274336 (1995-03-01), None
patent: 07-235680 (1995-09-01), None
patent: 08-274336 (1996-10-01), None
patent: 9-260671 (1997-10-01), None
patent: 2002-50636 (2002-02-01), None
patent: 2002-57165 (2002-02-01), None
patent: 2002-64107 (2002-02-01), None
Stanley Wolf and Richard N. Tauber, Silicon Processing For The VLSI Era, Second Edition, Lattice Press, 2000, pp. 399-402.
Kajiwara Masayuki
Nagao Ritsuko
Isaac Stanetta
Lebentritt Michael
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