Source side programming

Details Source side programming Source side programming

2006-12-26

2006-12-26

Trinh, Michael (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S322000

Reexamination Certificate

active

07154141

ABSTRACT:
A flash EEPROM array having a double-diffused source junction that can be used for source side programming. The flash EEPROM array, when programmed from the source side exhibits fast programming rates. Additionally, source side programming of arrays having different physical characteristics (e.g. transistor cell channel length) exhibit tighter program rate distributions than for the same arrays in which drain side programming is used.

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Samachisa, Gheorghe, et al. “A 128K Flash EEPROM Using Double-Polysilicon Technology,”IEEE Journal of Solid-State Circuits, (Oct. 1987) vol. SC-22, N0. (5):676-683.

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