SOI wafer and a method for producing an SOI wafer

Details SOI wafer and a method for producing an SOI wafer SOI wafer and a method for producing an SOI wafer

2006-10-31

2006-10-31

Lee, Calvin (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257S051000, C117S013000

Reexamination Certificate

active

07129123

ABSTRACT:
In a method for producing an SOI wafer comprising steps of implanting ions from a bond wafer surface to form an ion-implanted layer inside the wafer, bonding the ion-implanted bond wafer surface and a surface of a base wafer via an oxide film or directly, and forming an SOI wafer by delaminating by heat treatment a part of the bond wafer at the ion-implanted layer, the bond wafer is a silicon wafer that consists of a silicon single crystal grown by Czochralski method, that is occupied by N region outside OSF generated in a ring shape and that has no defect region detected by Cu deposition method. Thereby, even an extremely thin SOI layer having a thickness of 200 nm or less, can provide an SOI wafer that has an excellent electric property without micro pits caused by acid cleaning, and can be produced without increasing the number of processes.

REFERENCES:
patent: 6482260 (2002-11-01), Sakurada et al.
patent: 6913646 (2005-07-01), Sakurada et al.
patent: 2003/0106484 (2003-06-01), Fusegawa et al.
patent: 2005/0032331 (2005-02-01), Nakano
patent: 2005/0211158 (2005-09-01), Hoshi et al.
patent: A 10-79498 (1998-03-01), None
patent: A 2001-44398 (2001-02-01), None
patent: A 2001-146498 (2001-05-01), None
patent: A 2002-201093 (2002-07-01), None
patent: A 2002-226296 (2002-08-01), None

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