Semiconductor thin film decomposing method, decomposed...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor

Reexamination Certificate

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C438S795000

Reexamination Certificate

active

07151046

ABSTRACT:
A surface roughness of a polycrystalline semiconductor film to be formed by a laser annealing method is reduced. A transmittance distribution filter is disposed at the optical system of a laser annealing apparatus. The transmittance distribution filter controls an irradiation light intensity distribution along a scanning direction of a substrate formed with an amorphous silicon semiconductor thin film to have a distribution having an energy part equal to or higher than a fine crystal threshold on a high energy light intensity side and an energy part for melting and combining only a surface layer. This transmittance distribution filter is applied to an excimer laser annealing method, a phase shift stripe method or an SLS method respectively using a general line beam to thereby reduce the height of protrusions on a polycrystalline surface.

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