Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2006-06-13

2006-06-13

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S649000, C438S651000

Reexamination Certificate

active

07060616

ABSTRACT:
The present invention is provided to manufacture a semiconductor device capable of preventing loss of dopants due to external diffusion thereof from a junction area by forming a cobalt mono-silicide film through a first RTP process, implanting ions not serving as a donor or an acceptor with a low energy and a low dose to make the film amorphous, and then forming a cobalt silicide film through a second RTP process.

REFERENCES:
patent: 5536684 (1996-07-01), Dass et al.
patent: 6284662 (2001-09-01), Mikagi
patent: 6444578 (2002-09-01), Cabral, Jr. et al.
patent: 6815275 (2004-11-01), Kwon et al.
patent: 2002/0115262 (2002-08-01), Cabral, Jr. et al.
patent: 2003/0057553 (2003-03-01), DelaRosa et al.
patent: 2001352058 (2001-12-01), None

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