Thin film transistor and method for manufacturing the same

Details Thin film transistor and method for manufacturing the same Thin film transistor and method for manufacturing the same

2006-06-20

2006-06-20

Geyer, Scott (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S066000

Reexamination Certificate

active

07064364

ABSTRACT:
A thin film transistor is provided including a transparent insulating substrate, a lower light shielding film disposed above the transparent insulating substrate, a base interlayer film disposed above the lower light shielding film, a semiconductor film disposed above the base interlayer film, wherein the semiconductor film is formed of polycrystalline silicon. A thin film transistor further comprises roughness formed at an interface between the base interlayer and the semiconductor film, a gate insulating film above the semiconductor film, and a gate electrode above the gate insulating film.

REFERENCES:
patent: 6327006 (2001-12-01), Sato et al.
patent: 4-349637 (1992-12-01), None
patent: 4-367276 (1992-12-01), None
patent: 6-45605 (1994-02-01), None
patent: 10-111520 (1998-04-01), None

Affiliated with

Also associated with

Rating

Thin film transistor and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film transistor and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor and method for manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3677919