Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-05
2006-12-05
Dang, Phuc T. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S331000, C257S333000
Reexamination Certificate
active
07145192
ABSTRACT:
An object of the present invention is to provide a MOS transistor of a new structure and a method of manufacturing the same that is capable of easily fabricating a high integration density device by overcoming photolithography limitations. The object of the present invention is accomplished by a MOS transistor, including a semiconductor substrate having a projection in which the width of an upper portion thereof is larger than that of a lower portion thereof; an isolating layer formed in the middle of substrate of the projection; first and second drain regions formed within the surface of the substrate of the projection; first and second source regions formed within the surface of the substrate on both sides of the projection; a gate insulating layer formed on the entire surface of the substrate; and first and second gates formed on the gate insulating layer on both sides of the substrate of the projection.
REFERENCES:
patent: 5017504 (1991-05-01), Nishimura et al.
patent: 5719067 (1998-02-01), Gardner et al.
patent: 5888868 (1999-03-01), Yamazaki et al.
patent: 5940707 (1999-08-01), Gardner et al.
patent: 6548856 (2003-04-01), Lin et al.
patent: 6635924 (2003-10-01), Hergenrother et al.
Dang Phuc T.
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
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