Method to remove copper without pattern density effect

Details Method to remove copper without pattern density effect Method to remove copper without pattern density effect

2006-02-07

2006-02-07

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S692000, C438S695000, C438S745000

Reexamination Certificate

active

06995089

ABSTRACT:
A new method is provided that allows for the application of electropolish for removal of copper and that is independent of pattern density of the removed copper. Electropolish of the copper is first accomplished by reversing current in the H2SO4or H3PO4solution. After identifying the endpoint of the electropolish, chemical etching of the copper in a H2SO4or H3PO4solution is continued, in this manner avoiding effects of high current density introduced by pattern density.

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