Method of forming shallow doped junctions having a variable...

Details Method of forming shallow doped junctions having a variable... Method of forming shallow doped junctions having a variable...

2006-06-13

2006-06-13

Loke, Steven (Department: 2811)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S231000

Reexamination Certificate

active

07060599

ABSTRACT:
Disclosed is an electrical device having, and a process for forming, a shallow junction with a variable concentration profile gradation of dopants. The process of the present invention includes first providing and masking a surface on an in-process integrated circuit wafer on which the shallow junction is to be formed. Next, a low ion velocity and low energy ion bombardment plasma doping or PLAD operation is conducted to provide a highly doped inner portion of a shallow junction. In a further step, a higher ion velocity and energy conventional ion bombardment implantation doping operation is conducted using a medium power implanter to extend the shallow junction boundaries with a lightly doped outer portion. In various embodiments, the doping steps can be performed in reverse order. In addition, an anneal step can be performed after any doping operation.

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Shu Qin, et al., “Plasma Immersion Ion Implantation Doping Experiments for Microelectronics,” pp. 962-968, J. Vac. Sci. Technol. B 12(2), Mar./Apr. 1994.
Shu Qin, et al., “Plasma Immersion Ion Implantation Doping Experiments for Microelectronics,” pp. 962-968, J. Vac. Sci. Technol. B 12(2), Mar./Apr. 1994.

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